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JEOL NeoARM is coming to OU

JEOL NeoARM + CEFID analytical aberration-corrected STEM coming to OU

b–d, TEM–EDS maps (b) and HAADF STEM (c,d) with Fourier-filtered images of the F–Co-washed cathode surface at the marked regions in panel b by yellow marks, respectively.
b–d, TEM–EDS maps (b) and HAADF STEM (c,d) with Fourier-filtered images of the F–Co-washed cathode surface at the marked regions in panel b by yellow marks, respectively. From Ryu, HH., Lim, HW., Lee, S.G. et al. Nat Energy 9, 47–56 (2024).

With the award of an NSF MRI and support from the OVPRP, OU has purchased a JEOL NeoARM 200kV aberration corrected STEM materials specific microscope.  This state-of-the-art instrument will allow researchers to probe the structures of materials down to an ultimate resolution of 70 pm.  With a DECTRIS Ela hybrid-pixel direct electron camera coupled to a CEOS energy filter / EELS, electronic structures of thin films, energy and battery materials, and other semiconductor devices will be able to be investigated on the atomic level.  Additionally a high throughput EDS detector allows for quick chemical mapping of all samples imaged on the microscope, leading the way for researchers to quickly investigate all aspects of their materials down to the atomic level. Room B21 Lin Hall is currently undergoing renovations to prepare for the microscope, which we hope will be installed by early 2025.

Images and spectra taken on a JEOL NeoARM: Ryu, HH., Lim, HW., Lee, S.G. et al. Nat Energy 9, 47–56 (2024). https://doi.org/10.1038/s41560-023-01403-8